It is shown that the oxidation rate increases drastically in the presence of water vapour, and the growth Of MoO3 crystals on the oxide surface
increases considerably. The different re.-ions in the oxide cross-section are Mo-depleted compared with the corresponding regions in the bulk when
oxidised in oxygen saturated with 10% water vapour. However., the samples oxidised in dry oxygen only shows Mo-depletion in some outer parts of the
oxide. Accelerated growth of the MoSi2-oxide layer during exposure in O-2+10%H2O compared to that in O-2 can be related to the fact that more volatile
Mo-species form in the presence of water vapour, resulting in a substantial loss of MoO3 from the inner part of the oxide. The voids left behind are
not healed by the silica at this low temperature, which leaves the oxide with an open structure. As a result, the oxidation rate increases.
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