The development of laser-enhanced electroplating process offers a promising technique for high-speed and mask-less selective plating and/or as a
repair and engineering design change scheme for microcircuits [300, 325-28]. For this, temperature is used to modify the position of the equilibrium
potential in a localized region so that electro-deposition is driven by the potential difference between this region and the non-irradiated regions.
Use of a focused argon laser beam (488nm) in an acid copper solution provided plating rates as high as 25µm/s [300]. Bindra et al
[327, 328] discussed the mechanism of laser-enhanced acid copper plating and Paatsch et al [329] reported on laser-induced deposition of copper on
p-type silicon. It was demonstrated that the increase in the plating rate under laser illumination results principally from photo-induced heating of
the electrode surface [328]. |